B1.4 - Ultra-Thin Resistors for Piezoresistive Sensors
摘要
Different ion implantation techniques for the fabrication of shallow boron doped layers used as piezoresistors have been evaluated. In the present case the corresponding process parameters have been optimized to meet demands for high deflection sensitivity of piezoresistive AFM cantilevers. Boron doped layers with decreased pn-junction depths down to 20 nm has been fabricated showing increased deflection sensitivities of (10-20)10
引用本文（GB/T 7714）
B. Schmidt, M. Zier, Peter Philipp, 等. B1.4 - Ultra-Thin Resistors for Piezoresistive Sensors[J]. Proceedings SENSOR 2011, 2011.
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