基于PECVD技术的石墨烯可控制备与应用：现状与展望
摘要
<p indent="0mm">Graphene, as a two-dimensional crystalline nanomaterial formed by sp²-hybridized carbon atoms, has hold tremendous potential for various applications owing to its excellent electrical/thermal conductivity, large specific surface area, and high transparency. To promote the practical applications of graphene, numerous synthetic methods for graphene have been explored, e.g., liquid-phase exfoliation, SiC thermal decomposition, chemical vapor deposition (CVD) and so on. Specifically, the CVD approach has received extensive attention for the preparation of high-quality graphene with high controllability and compatibility. However, the high growth temperature and tedious transfer process from growth substrates onto target substrates severely hinder the development of graphene. To address these challenges and promote the widespread utilization of graphene, it is imperative to seek effective synthetic methods for the achievement of high-quality graphene growth on arbitrary surfaces and at low temperatures. Plasma-enhanced chemical vapor deposition (PECVD) technique offers a promising approach for graphene synthesis by introducing external energy to facilitate the decomposition of precursor molecules. With the assistance of plasma, a rich chemical environment comprising a mixture of radicals, molecules, and ions derived from reaction precursors are formed. This enables the preparation of graphene at lower growth temperatures on more diverse substrates, thereby reducing energy consumption, improving production efficiency, further expanding the application scenarios of graphene. In this review, we summarize the recent progress of PECVD synthesis of graphene toward wide applications. Initially, three different plasma systems consisting of radio-frequency PECVD (RF-PECVD), direct-current PECVD (DC-PECVD), and microwave PECVD (MW-PECVD) are categorized in terms of the plasma generation sources. Through regulating the equilibrium states between etching and depositi