基于渐变AlxGa1-xN缓冲层的透射式GaN光电阴极
摘要
We create a GaN photocathode based on graded AlxGa1-xN buffer layers to overcome the influence of buffer-emission layer interface on the photoemission of transmission-mode GaN photocathodes. A gateshaped spectral response with a 260-nm starting wavelength and a 375-nm cut-off wavelength is obtained. Average quantum efficiency is 15% and short wavelength responses are almost equivalent to long wavelength ones. The fitted interface recombination velocity is 510 4 cm/s, with negligible magnitude, proving that the design of the graded buffer layers is efficient in obtaining good interface quality between the buffer and the emission layer.
引用本文（GB/T 7714）
Xiaoqing Du, Benkang Chang, Yunsheng Qian, 等. 基于渐变AlxGa1-xN缓冲层的透射式GaN光电阴极[J]. Chinese Optics Letters, 2011.
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