一种确定In0.53Ga0.47As/InP单光子雪崩二极管击穿电压的方法

Peng Zhou、Changjun Liao、Zhengjun Wei、Chunfei Li、Shuqiong Yuan

2011Chinese Optics LettersPhysics and Astronomy被引 1开放获取

摘要

We examine the saturation of relative current gain of In0.53Ga0.47As/InP single photon avalanche diodes (SPADs) operated in Geiger mode. The punch-through voltage and breakdown voltage of the SPADs can be measured using a simple and accurate method. The analysis method is temperature-independent and can be applied to most SPADs.

引用本文（GB/T 7714）

Peng Zhou, Changjun Liao, Zhengjun Wei, 等. 一种确定In0.53Ga0.47As/InP单光子雪崩二极管击穿电压的方法[J]. Chinese Optics Letters, 2011.

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DOI：https://doi.org/10.3788/col201109.010402

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