Ti 3 C 2 T x MXene基电磁屏蔽材料的研究进展
摘要
With the rapid development of electronic equipment and wireless communication in recent years, problems of electromagnetic interference are also becoming more and more serious. It is urgent to develop high performance electromagnetic interference(EMI) shielding materials to alleviate the damage of electromagnetic interference. MXene(Ti<sub>3</sub>C<sub>2</sub><i>T</i><sub><i>x</i></sub>) is a novel kind of 2D material with ultrahigh electrical conductivity and unique chemically active surface, and therefore exhibits extremely excellent electromagnetic shielding performance. The preparation, structural feature and EMI shielding mechanism of Ti<sub>3</sub>C<sub>2</sub><i>T</i><sub><i>x</i></sub> were focused and introduced in this paper,the latest research progress on EMI shielding applications of Ti<sub>3</sub>C<sub>2</sub><i>T</i><sub><i>x</i></sub>-based films and 3D porous materials was objectively reviewed and evaluated, and the main problem at the present was analyzed. In addition, the future development direction and tendency of Ti<sub>3</sub>C<sub>2</sub><i>T</i><sub><i>x</i></sub>-based EMI shielding materials from the aspects of preparation, microstructure control and structure design and so on were also prospected in this poper,based on current development needs including developing low-cost, green and efficient Ti<sub>3</sub>C<sub>2</sub><i>T</i><sub><i>x</i></sub> preparation methods, solving the long-standing oxidation problem of Ti<sub>3</sub>C<sub>2</sub><i>T</i><sub><i>x</i></sub>, designing new structure of Ti<sub>3</sub>C<sub>2</sub><i>T</i><sub><i>x</i></sub>-based EMI shielding materials and finding out other MXenes EMI shielding materials other than Ti<sub>3</sub>C<sub>2</sub><i>T</i><sub><i>x</i></sub>, which can provide new ideas and guidance for the further development of the next generation of high-performance EMI shielding materials.