Metal dopants in HfO2-based RRAM： first principle study
摘要
Based on density-functional theory(DFT), the effects of metal dopants in HfO2-based RRAM are studied by the Vienna ab initio simulation package(VASP). Metal dopants are classified into two types(interstitial and substitutional) according to the formation energy when they exist in HfO2 cell. Several conductive channels are observed through the isosurface plots of the partial charge density for HfO2 doped with interstitial metals, while this phenomenon cannot be found in HfO2 doped with substitutional metals. The electron density of states(DOS)and the projected electron density of states(PDOS) are calculated and analyzed; it is found that the conduction filament in HfO2 is directly formed by the interstitial metals and further, that the substitutional metals cannot directly generate conduction filament. However, all the metal dopants contribute to the formation of the oxygen vacancy(VO) filament. The formation energy of the VO and the interaction between metal dopants and VO are calculated;it is revealed that the P-type substitutional metal dopants have a strong enhanced effect on the VO filament, the interstitial metal dopants have a minor assistant effect, while Hf-like and N-type substitutional metal dopants have the weakest assistant effect.