Stability performance of optimized symmetric DG-MOSFET
摘要
This article presents the bias and geometry optimization procedure for the radio frequency(RF) stability performance of nanoscale symmetric double-gate metal-oxide semiconductor field-effect transistors(DGMOSFETs).The stability model can provide hints for optimizing the DG-MOSFET under an RF range.The device parameters are extracted for different bias and geometry conditions through numerical simulation,and the RF figures of merit such as cut-off frequency(ft) and maximum oscillation frequency(fmax),along with stability factor,are calculated for an optimized structure.The proposed structure exhibits good RF stability performance.
引用本文（GB/T 7714）
Sivasankaran, Mallick. Stability performance of optimized symmetric DG-MOSFET[J]. 半导体学报：英文版, 2013.
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