Surface Polishing of 6H-SiC Substrates
摘要
The surface polishing for silicon carbide (SiC) substrates was investigated and results were presented for mechanical polishing (MP) and chemo-mechanical polishing (CMP). High quality surfaces were obtained after CMP with colloidal silica. The removal mechanism of scratches in MP and detailed physical and chemical process during CMP were analyzed. The effects of MP and CMP on the surface roughness were assessed by optical microscopy (OM), atomic force microscopy (AFM) and step profilometry. KOH etching and high resolution X-ray diffractometry (HRXRD) were applied to evaluate the subsurface damage of 6H-SiC substrates.
引用本文（GB/T 7714）
Jiang State. Surface Polishing of 6H-SiC Substrates[J]. 未知来源, 2007.
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