The PL 'violet shift' of cerium dioxide on silicon
摘要
CeO2 thin film was fabricated by dual ion beam epitaxial technique. The phenomenon of PL violet shift at room temperature was observed, and the distance of shift was about 65 nm. After the analysis of crystal structure and valence in the compound were carried out by XRD and XPS technique, it was concluded that the PL shift was related with valence of cerium ion in the oxides. When the valence of cerium ion varied from tetravalence to trivalence, the PL peak position would move from blue region to violet region and the phenomenon of 'violet shift' was observed.
引用本文（GB/T 7714）
Chai Chai, Chunlin, Yang, 等. The PL 'violet shift' of cerium dioxide on silicon[J]. 中国科学通报：英文版, 2001.
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