Resistance Switching Properties of Ag/Zn Mn2O4/p-Si Fabricated by Magnetron Sputtering for Resistance Random Access Memory

Wang Shi Hua、Li -、Zhi-Da、Xu、Jiwen、Zhang、Yupei、Yang

2015Acta Scientiarum Naturalium Universitatis SunyatseniEngineering被引 1

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Wang Shi Hua, Li -, Zhi-Da, 等. Resistance Switching Properties of Ag/Zn Mn2O4/p-Si Fabricated by Magnetron Sputtering for Resistance Random Access Memory[J]. Acta Scientiarum Naturalium Universitatis Sunyatseni, 2015.

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