Mechanism of negative capacitance in LEDs

Feng、Lie-feng、Жу、Chuan-yun、Chen、Yong、Zeng、Zhibin

2005Acta Scientiarum Naturalium Universitatis SunyatseniEngineering被引 1

摘要

In order to explain the phenomenon of negative capacitance(NC) in light emitting diodes LEDs,we present a new model based on local strong recombination in active region and firstly deduce the analytic expression of NC from continuity equation.The theoretical result indicates that the NC effect becomes stronger when the carrier recombination rate increases in a certain range,which is consistent with the experimental result.Accordingly,we confirm that the NC is caused by carrier recombination in active region instead of by other exterior factors.

引用本文（GB/T 7714）

Feng, Lie-feng, Жу, 等. Mechanism of negative capacitance in LEDs[J]. Acta Scientiarum Naturalium Universitatis Sunyatseni, 2005.

引文网络

参考文献与被引分析加载中…

本站仅收录题录与摘要供学习参考，全文版权归属出版方；如有侵权请联系我们删除。