NO_2 Sensitive Ga-doped ZnO Thin Film

Shigenori Matsushima、Daisuke Ikeda、Kenkichiro Kobayashi、Genji Okada

1992Chemistry LettersEngineering被引 10

摘要

The resistivity of a Ga-doped ZnO film in a NO 2 atmosphere remarkably increases with decreasing the thickness of the film while that in air remains unchanged. A Ga-doped ZnO film with 75 nm in thickness shows high sensitivity and rapid response to NO 2 at 400 ° C

引用本文（GB/T 7714）

Shigenori Matsushima, Daisuke Ikeda, Kenkichiro Kobayashi, 等. NO_2 Sensitive Ga-doped ZnO Thin Film[J]. Chemistry Letters, 1992.

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