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Origin of the Flat Band in Heavily Cs-Doped Graphene

Niels EhlenMartin HellGiovanni MariniEddwi Hesky HasdeoRiichiro SaitoYannic FalkeMark O. GoerbigGiovanni Di Santo

2019ACS NanoMaterials Science被引 44开放获取

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摘要

A flat energy dispersion of electrons at the Fermi level of a material leads to instabilities in the electronic system and can drive phase transitions. Here we show that the flat band in graphene can be achieved by sandwiching a graphene monolayer by two cesium (Cs) layers. We investigate the flat band by a combination of angle-resolved photoemission spectroscopy experiment and the calculations. Our work highlights that charge transfer, zone folding of graphene bands, and the covalent bonding between C and Cs atoms are the origin of the flat energy band formation. Analysis of the Stoner criterion for the flat band suggests the presence of a ferromagnetic instability. The presented approach is an alternative route for obtaining flat band materials to twisting bilayer graphene which yields thermodynamically stable flat band materials in large areas.

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Niels Ehlen, Martin Hell, Giovanni Marini, 等. Origin of the Flat Band in Heavily Cs-Doped Graphene[J]. ACS Nano, 2019.

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DOI:https://doi.org/10.1021/acsnano.9b08622

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