A new wideband LNA using a gm-boosting technique
摘要
A new broadband low-noise amplifier(LNA) is proposed. The conventional common gate(CG) LNA exhibitsarelativelyhighnoisefigure,soactivegm-boostingtechnologyisutilizedtorestrainthenoisegeneratedby the input transistors and reduce the noise figure. Theory, simulation and measurement are shown. An implemented prototype using 0.13 m CMOS technology is evaluated using on-wafer probing. S11and S22are below –10 dB across 0.1–5 GHz. Measurements also show a gain of 18.3 dB with a 3 dB bandwidth from 100 MHz to 2.1 GHz and an IIP3 of –7 dBm at 2 GHz. The measured noise figure is better than 2.5 dB below 2.1 GHz, is better than4.5 dB below 5 GHz, and at 500 MHz, it gets its minimum value 1.8 dB. The LNA consumes 9 mA from 1.5 V supply and occupies an area of 0.04 mm2.