石墨烯的化学气相沉积生长与过程工程学研究
摘要
Graphene, the two-dimensional network of sp<sup>2</sup>-hybridized carbon atoms, has attracted worldwide interest because of its unique energy band structure as well as its outstanding electronic, thermal and mechanical properties. The extremely high carrier mobility in graphene provides a great potential for next-generation ultrafast graphene-based electronic devices. One of the bottle-neck challenges for graphene electronics is the controlled growth of high-quality graphene. Among the typical techniques reported for graphene production, chemical vapor deposition (CVD) has been paid particular attention for its reliability and facile access to highly-crystalline and large-area graphene. We are working on controlled CVD growth of graphene following a concept of <italic>process engineering</italic>. Our general strategy is to design and control the elementary steps of catalytic CVD process for achieving a precise control over layer thickness, stacking order, domain size, doping and energy band structure. In this paper, we will show a few typical examples to demonstrate such kinds of <italic>process engineering </italic>for the designed growth of graphene together with a brief discussion on the future directions, challenges and opportunities in this fascinating research area.