NEW SOI STRUCTURE——RECENT PROGRESS ON SOI RESEARCH
摘要
Significant progress has been achieved in silicon-on-insulator(SOI) technology, but standard SOI structures employ SiO 2 as insulator and silicon as the semiconductor material. This results in some disadvantages and limits the areas of application. To solve these questions and meet the demands of special devices and circuits, new SOI structure have been investigated such as SOIM, GPSOI, GeSiOI, Si on AlN, SiCOI, GeSiOI and SSOI. An overview is presented of recent progress and applications of new SOI structures, with reference to some of our own work.
引用本文（GB/T 7714）
Xin Xie. NEW SOI STRUCTURE——RECENT PROGRESS ON SOI RESEARCH[J]. 未知来源, 2002.
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