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High power laser diodes of 2μm AlGaAsSb/InGaSb type I quantum-wells

廖永平、张瑜、邢军亮、魏思航、郝宏玥、王国伟、徐应强、牛智川

2015半导体学报：英文版Physics and Astronomy被引 1

摘要

2 /zm AlGaAsSb/InGaSb type-Ⅰ quantum-well high-power laser diodes(LDs) are grown using molecular beam epitaxy.Stripe-type waveguide single LD(single emitter) and array LD(four emitters) devices without facet coatings are fabricated.For the single LDs(single emitter) device,the maximum output power under continuous wave(CW) operation is 0.5 W at 10℃ with a threshold current density of 150 A/cm~2 and a slope efficiency of 0.17 W/A,the output powers under the pulse mode in the 5%duty cycles are much higher,up to 0.98 W.For the array LD devices,the maximum output powers are 1.02 W under the CW mode and 3.03 W under the pulse mode at room temperature.

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