Design and fabrication of a 3.3 kV 4H-SiC MOSFET
摘要
A 4H-SiC MOSFET with breakdown voltage higher than 3300 V has been successfully designed and fabricated. Numerical simulations have been performed to optimize the parameters of the drift layer and DMOSFET cell structure of active area. The n-type epilayer is 33 m thick with a doping of 2.5x10 15 cm-3. The devices were fabricated with a floating guard ring edge termination. The drain current Id=D5 A at Vg=D20 V, corresponding to Vd=D2.5 V.
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黄润华, 陶永洪, 柏松, 等. Design and fabrication of a 3.3 kV 4H-SiC MOSFET[J]. 半导体学报：英文版, 2015.
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