High performance trench MOS barrier Schottky diode with high-k gate oxide
摘要
A novel trench MOS barrier Schottky diode(TMBS) device with a high-k material introduced into the gate insulator is reported, which is named high-k TMBS. By simulation with Medici, it is found that the high-k TMBS can have 19.8% lower leakage current while maintaining the same breakdown voltage and forward turn-on voltage compared with the conventional regular trench TMBS.
引用本文（GB/T 7714）
翟东媛, Jun Zhu, 赵毅, 等. High performance trench MOS barrier Schottky diode with high-k gate oxide[J]. 中国物理B：英文版, 2015.
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