后摩尔时代集成电路的新器件技术
摘要
With the continuous development of large scale integrated circuit (IC) technology, challenges resulting from short channel effects, quantum tunneling and parasitic effects make it increasingly difficult for conventional microelectronic device technology to fulfill the demand of sustaining progressing of IC technology node, and especially the increasingly serious problem of energy consumption has been the greatest bottleneck in continuing Moores Law, making it inevitable to take advantage of new device technology in post-Moores era. Therefore, it has become a hot issue that how to develop nanoscale new devices to meet the future demands of microelectronic industry in different IC applications. In this paper, we introduce new device technologies from viewpoints of new structure, new principle and new material, including FinFET, UTB SOI devices, quasi-SOI devices, MultiGate/Gate-All-Around silicon nanowire devices, super steep sub-threshold swing devices and high mobility channel devices. Advantages, existing problems, potential solutions and application prospect of these devices are analyzed, and a roadmap for new device technology in post-Moore era is discussed.