CVD制备SiO<sub>x</sub>纳米线的各个生长阶段的直接实验证据
摘要
Among the mechanisms for nanowire growths, the vapor-liquid-solid (VLS) mechanism is the most widely accepted. Nevertheless, the growth process and relevant details for the VLS mechanism are not yet fully understood for the complicated nano processes involved. In the present article, with a precise control of temperature, gas flow, pressure, and reaction periods in a home- built high-temperature chemical vapor deposition (CVD) system, detailed processes of catalyzing, nucleation, and growth of the SiO<italic><sub>x</sub></italic> nanowires and a stepwise non uniformity in diameter of nano- wire were successfully traced. With analysis of these experimental results via nanocurvature and nano ripening effects, a further understanding of the vapor-liquid-solid mechanism, especially the mechanism for formation of the stepwise non uniformity in diameter of nanowires, was achieved for the first time.