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Deposition of Er：A12O3 Films and Photoluminescence Characteristics

李成仁、宋昌烈、李淑凤、饶文雄

2003Acta Scientiarum Naturalium Universitatis SunyatseniMaterials Science被引 2

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摘要

Er^3+-doped Al2O3 films were deposited on silicon substrates by reactive closed-field unbalanced magnetron sput-tering. The process parameters, such as target bias voltage, substrate bias voltage, O2 gas flows, sputtering gas pressure, were studied. The 1.53μm photoluminescence characteristics from Er^3+ were measured. The relations among the PL peak intensity, annealing temperatures, and pump power were experimentally investigated.

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李成仁, 宋昌烈, 李淑凤, 等. Deposition of Er：A12O3 Films and Photoluminescence Characteristics[J]. Acta Scientiarum Naturalium Universitatis Sunyatseni, 2003.

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