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Radiative Inter-Sublevel Transitions in InGaAs/AlGaAs Quantum Dots

A. WeberKarsten GoedeMarius GrundmannF. HeinrichsdorffD. BimbergV. M. UstinovA. E. ZhukovN. N. Ledentsov

2001physica status solidi (b)Physics and Astronomy被引 3

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摘要

We report on the emission of mid-infrared (MIR) radiation from InGaAs/AlGaAs quantum dots upon photoexcitation and electrical injection. Mid-infrared radiation is achieved from bipolar quantum-dot lasers during near-infrared lasing. The MIR spectrum exhibits a peak at 16 μm and is dominantly TM polarized. The MIR intensity exhibits a superlinear dependence on the injection. These results are compared to optically pumped emission from InGaAs/GaAs quantum dots. The unpolarized spectrum shows peaks at 15 and 10 μm. The MIR intensity increases sublinearly with excitation power.

引用本文(GB/T 7714)

A. Weber, Karsten Goede, Marius Grundmann, 等. Radiative Inter-Sublevel Transitions in InGaAs/AlGaAs Quantum Dots[J]. physica status solidi (b), 2001.

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DOI:https://doi.org/10.1002/(sici)1521-3951(200104)224:3<833::aid-pssb833>3.0.co;2-h

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