IIA-4 Low threshold LPE In<sub>1-x'</sub>,Ga<sub>x'</sub>,P<sub>1-z'</sub>,As<sub>z'</sub>,/In<sub>1-x</sub>Ga<sub>x</sub>P<sub>1-z</sub>As<sub>z</sub>/In<sub>1-x'</sub>,Ga<sub>x</sub>,P<sub>1-z'</sub>,As<sub>z'</sub>, yellow double heterojunction laser diodes (J &lt; 10<sup>4</sup>A/cm<sup>2</sup>, &#955; &#8776; 5850 &#197;, 77&#176;K)
摘要
Summary form only. An abstract of the above-titled article taken from the Device Research Conference (24-26 June 1975, Carleton University, Ottawa, Ont., Canada) is presented.
引用本文（GB/T 7714）
W.R. Hitchens, N. Holonyak, P. D. Wright, 等. IIA-4 Low threshold LPE In<sub>1-x'</sub>,Ga<sub>x'</sub>,P<sub>1-z'</sub>,As<sub>z'</sub>,/In<sub>1-x</sub>Ga<sub>x</sub>P<sub>1-z</sub>As<sub>z</sub>/In<sub>1-x'</sub>,Ga<sub>x</sub>,P<sub>1-z'</sub>,As<sub>z'</sub>, yellow double heterojunction laser diodes (J &lt; 10<sup>4</sup>A/cm<sup>2</sup>, &#955; &#8776; 5850 &#197;, 77&#176;K)[J]. IEEE Transactions on Electron Devices, 1975.
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