高K栅层硅基电光调制器
摘要
A high-permittivity (high-k) material is applied as the gate dielectric layer in a silicon metal-oxidesemiconductor (MOS) capacitor to form a special electro-optic (EO) modulator. Both induced charge density and modulation efficiency in the proposed modulator are improved due to the special structure design and the application of the high-k material. The device has an ultra-compact dimension of 691 m in length.
引用本文（GB/T 7714）
Mengxia Zhu, Zhiping Zhou, Dingshan Gao. 高K栅层硅基电光调制器[J]. Chinese Optics Letters, 2009.
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