A Transient Model of a Cs-Ba Diode

James R. Luke、Mohamed S. El‐Genk、Mohamed S. El‐Genk、Mark D. Hoover

1994AIP conference proceedingsEngineering被引 6

摘要

A transient model of a Cs‐Ba diode is developed assuming homogeneous plasma conditions. The diode model is coupled to a sub‐model of the control circuit that is being used to test the Cs‐Ba tacitron. Model calculations compare favorably with experimental results. The model predicts correct trends, such as increased voltage drop as either the Cs pressure in the interelectrode gap, or the discharge current increases or the decrease of minimum voltage drop with increasing Cs reservoir temperature. The model also determines the I–V curves that not only have the right shape but are numerically similar to the measured I–V curves.

引用本文（GB/T 7714）

James R. Luke, Mohamed S. El‐Genk, Mohamed S. El‐Genk, 等. A Transient Model of a Cs-Ba Diode[J]. AIP conference proceedings, 1994.

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DOI：https://doi.org/10.1063/1.2950132

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