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Effects of V/III ratio on a-plane GaN epilayers with an InGaN interlayer

王建霞、汪连山、杨少延、李辉杰、赵桂娟、Heng Zhang、魏鸿源、焦春美

2014中国物理B：英文版Physics and Astronomy被引 2

摘要

The effects of V/Ⅲgrowth flux ratio on a-plane GaN films grown on r-plane sapphire substrates with an InGaN interlayer are investigated.The surface morphology,crystalline quality,strain states,and density of basal stacking faults were found to depend heavily upon the V/Ⅲratio.With decreasing V/Ⅲratio,the surface morphology and crystal quality first improved and then deteriorated,and the density of the basal-plane stacking faults also first decreased and then increased.The optimal V/Ⅲratio growth condition for the best surface morphology and crystalline quality and the smallest basalplane stacking fault density of a-GaN films are found.We also found that the formation of basal-plane stacking faults is an effective way to release strain.

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