High performance silicon waveguide germanium photodetector
摘要
High-performance Ge-on-SOI p–i–n waveguide photodetectors with different sizes were fabricated. The performances, in terms of dark-current, photo current responsivity and 3-d B bandwidth, were well studied. A responsivity of 0.842 A/W at 1550 nm and dark current of 70 n A was measured from this detector at-1 V. The detector with a size of4 μm×10 μm demonstrated an optical band width of 19 GHz at-5 V for 1550 nm. Both the experimental results and the finite-difference time domain simulation show that, when the device size is above a certain threshold, the absorption is not sensitively dependent on such designing parameters as the width and length of the photodetector.
引用本文（GB/T 7714）
李冲, 薛春来, 李亚明, 等. High performance silicon waveguide germanium photodetector[J]. 中国物理B：英文版, 2015.
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