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Effects of GaN cap layer thickness on an AlN/GaN heterostructure

赵景涛、林兆军、栾崇彪、吕元杰、冯志宏、杨铭

2014中国物理B：英文版Physics and Astronomy被引 1

摘要

In this study, we investigate the effects of Ga N cap layer thickness on the two-dimensional electron gas(2DEG)electron density and 2DEG electron mobility of Al N/Ga N heterostructures by using the temperature-dependent Hall measurement and theoretical fitting method. The results of our analysis clearly indicate that the Ga N cap layer thickness of an Al N/Ga N heterostructure has influences on the 2DEG electron density and the electron mobility. For the Al N/Ga N heterostructures with a 3-nm Al N barrier layer, the optimized thickness of the Ga N cap layer is around 4 nm and the strained a-axis lattice constant of the Al N barrier layer is less than that of Ga N.

引用本文（GB/T 7714）