Influence of reaction parameters on synthesis of high-quality single-layer graphene on Cu using chemical vapor deposition
摘要
Large-area monolayer graphene samples grown on polycrystalline copper foil by thermal chemical vapor deposition with differing CH4 flux and growth time are investigated by Raman spectra, scanning electron microscopy, atomic force microscopy, and scanning tunneling microscopy. The defects, number of layers, and quality of graphene are shown to be controllable through tuning the reaction conditions: ideally to 2–3 sccm CH4 for 30 minutes.
引用本文（GB/T 7714）
杨贺, 申承民, 田园, 等. Influence of reaction parameters on synthesis of high-quality single-layer graphene on Cu using chemical vapor deposition[J]. 中国物理B：英文版, 2014.
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