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L_g=100 nm T-shaped gate AlGaN/GaN HEMTs on Si substrates with non-planar source/drain regrowth of highly-doped n~＋-GaN layer by MOCVD

黄杰、Li Shao Ming、邓泽华、刘纪美

2014中国物理B：英文版Physics and Astronomy被引 1

摘要

High-performance Al Ga N/Ga N high electron mobility transistors(HEMTs) grown on silicon substrates by metal–organic chemical-vapor deposition(MOCVD) with a selective non-planar n-type Ga N source/drain(S/D) regrowth are reported. A device exhibited a non-alloyed Ohmic contact resistance of 0.209 ?·mm and a comprehensive transconductance(gm) of 247 m S/mm. The current gain cutoff frequency f T and maximum oscillation frequency f MAX of 100-nm HEMT with S/D regrowth were measured to be 65 GHz and 69 GHz. Compared with those of the standard Ga N HEMT on silicon substrate, the fTand fMAXis 50% and 52% higher, respectively.

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