采用MBE生长1.6～2.3μm InGaAsSb/AlGaAsSb多量子阱

尤明慧、高欣、李占国、刘国军、Li Lin、李梅、Xiaohua Wang、薄报学

2011Physics and Astronomy被引 0

摘要

InGaAsSb/AlGaAsSb multi-quantum-well (MQWs) were grown by molecular beam epitaxy. The X-ray diffraction pattern presents multi-levels of satellite peaks, which indicate a good interface and excellent crystal quality. Meanwhile, photoluminescence shows the emission wavelength at room temperature covers 1.6~2.3 μm with varing In compositions in InGaAsSb/AlGaAsSb MQWs.

引用本文（GB/T 7714）

尤明慧, 高欣, 李占国, 等. 采用MBE生长1.6～2.3μm InGaAsSb/AlGaAsSb多量子阱[J]. 未知来源, 2011.

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