基于In-Zn-Ti-O氧化物半导体材料的薄膜晶体管
摘要
Thin film transistors based on In-Zn-Ti-O oxide channel layer were fabricated at room temperature. The atomic proportion of In, Zn and Ti in channel layer is 49:49:2. The device with field effect mobility of 9.8 m^2/V•s, on-off ratio higher than 10^5 and subthres-hold swing of 0.61/dec was obtained. While compared with devices without Ti doping, it is found that Ti-doping increases the threshold voltage in the positive direction and improves the field effect mobility of the devices.
引用本文（GB/T 7714）
姚绮君, 李曙新, 张群. 基于In-Zn-Ti-O氧化物半导体材料的薄膜晶体管[J]. 未知来源, 2010.
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