Optical Properties of Silicon—doped InGaN and GaN Layers
摘要
The optical properties of Silicon-doped InGaN and GaN grown on sapphire by MOCVD have been investigated by photoluminescence (PL) method. but the FWHM broadens with the increasing of the temperature. GaN sample shows red-shift, InGaN sample shows red-blue-red-shift. The temperature dependence of peak energy shift is studied and explained.
引用本文（GB/T 7714）
Kangling, LIUBao-lin, CAIJia-fa. Optical Properties of Silicon—doped InGaN and GaN Layers[J]. 半导体光子学与技术：英文版, 2004.
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