一种0.5μm GaAs PHEMT工艺的单刀九掷射频开关芯片
摘要
The design of a single-pole nine-throw (SP9T) multi-band RF switch with 0.5 μm GaAs PHEMT technology for CPE of the 2(superscript nd) and 3(superscript rd) generation mobile communication is described in this paper. It covers both GSM and TD-SCDMA frequency bands in transceiver systems, including two transmission paths and four reception paths for GSM and three transmission-reception paths for TD-SCDMA systems. The power capacity is 35 dBm; the insertion loss of each path is less than 1.2 dB; the isolation is more than 40 dB; the harmonic suppression ratio is more than 66 dBc. DC boost has been utilized to improve the linearity.
引用本文（GB/T 7714）
郭文婷, 王文礼, 王肖莹, 等. 一种0.5μm GaAs PHEMT工艺的单刀九掷射频开关芯片[J]. 未知来源, 2011.
引文网络
本站仅收录题录与摘要供学习参考，全文版权归属出版方；如有侵权请联系我们删除。